plasticnewsПластические массыPlasticheskie massy0554-2901PLASTMASSY Publishing House (Moscow)10.35164/0554-2901-2026-01-51-56plasticnews-1218Research ArticleПРИМЕНЕНИЕAPPLICATIONСравнительный анализ водных суспензий оксида церия и модифицирующих добавок для процесса химико-механической планаризации пластин с мелкощелевой изоляциейComparative analysis of aqueous suspensions of cerium oxide and modifying additives for the process of chemical and mechanical planarization of plates with Shallow Trench IsolationПлотниковД. С.PlotnikovD. S.БоковаЕ. С.BokovaE. S.ТерашкевичД. И.TerashkevichD. I.БарашковаК. А.BarashkovaK. A.karina.malkova.01@mail.ruЕвсюковаН. В.EvsyukovaN. V.ЗолинаЛ. И.ZolinaL. I.Российский государственный университет им. А.Н. Косыгина (Технологии. Дизайн. Искусство); АО «Нанотроника»РоссияRussian State University named after A.N. Kosygin (Technology. Design. Art); NANOTRONIKA JSCRussian FederationРоссийский государственный университет им. А.Н. Косыгина (Технологии. Дизайн. Искусство)РоссияRussian State University named after A.N. Kosygin (Technology. Design. Art)Russian Federation202611032026115156Copyright © Плотников Д.С., Бокова Е.С., Терашкевич Д.И., Барашкова К.А., Евсюкова Н.В., Золина Л.И., 20262026Плотников Д.С., Бокова Е.С., Терашкевич Д.И., Барашкова К.А., Евсюкова Н.В., Золина Л.И.Plotnikov D.S., Bokova E.S., Terashkevich D.I., Barashkova K.A., Evsyukova N.V., Zolina L.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.plastics-news.ru/jour/article/view/1218

В работе проведен сравнительный физико-химический анализ промышленных водных суспензий абразивных частиц оксида церия, применяемых в процессах химико-механической планаризации (ХМП) пластин с мелкощелевой изоляцией (ХМП STI). Методами ИК-спектроскопии и динамического светорассеяния показано, что суспензия оксида церия (образец 1) (pH ≈ 6) со средним размером частиц 120 нм дополнительно содержит полиакриловую кислоту (ПАК) и второй неионогенный полимер, предположительно полиакриламид (ПААМ), что создает условия для электростатической и пространственной стабилизации частиц абразива. Показано, что перевод суспензии (образец 1) в кислую область значений pH 3–1,5 приводит к бимодальному распределению частиц абразива по размерам, где, наряду с агрегатами размером от 1200 до 4000 нм, появляются частицы диаметром 45–30 нм.Суспензия (образец 2) (pH ≈ 3,5) со средним размером частиц 100–120 нм не содержит поликарбоксилатов, а её стабильность обусловлена присутствием низкомолекулярной глутаминовой кислоты. Исходя из известного поведения рассматриваемых суспензий в процессе ХМП STI кремниевых пластин, сформулирована роль и механизм работы входящих в них модифицирующих добавок.

A comparative physicochemical analysis of industrial aqueous suspensions of cerium oxide abrasive particles used in the processes of chemical-mechanical planarization (CMP) of plates with shallow trench isolation (CMP STI) was carried out. IR spectroscopy and dynamic light scattering showed that the cerium oxide suspension (pH ≈ 6) with an average particle size of 120 nm additionally contains polyacrylic acid (PAA) and a second non-ionic polymer, presumably polyacrylamide (PAAM), which creates conditions for electrostatic and spatial stabilization of abrasive particles. It has been shown that the transfer of the suspension (sample 1) to the acidic pH range of 3–1.5 leads to a bimodal distribution of abrasive particles by size, where, along with aggregates ranging in size from 1200 to 4000 nm, particles with a diameter of 45–30 nm appear.The suspension (sample 2) (pH ≈ 3.5) with an average particle size of 100-120 nm does not contain polycarboxylates, and its stability is due to the presence of low molecular weight glutamic acid. Based on the known behavior of the suspensions in question in the process of CMP of STI silicon wafers, the role and mechanism of operation of the modifying additives included in them are formulated.

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The authors declare that there are no conflicts of interest present.